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MOSFET Metal Oxide Semiconductor Field Effect Transistor
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   3163
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If the AC signal frequency is equal to the resonating frequency, Vsd is equal to 0 volts. If the AC frequency is greater than the resonating frequency, ...
PPT- Low Power High Speed VTMOS - Slideworld Medical Search Engines
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   619
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PPT- Scaling V th . Koura, Takamiya and Hiramoto, "Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs",
MOSVIEW A visualization tool for MOSFET biasing and sizing
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   536
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Vt – threshold voltage. Aß: mismatch process parameter of the ß[%.µm]. ß – gain factor. MOSVIEW: A visualization tool for MOSFET biasing and sizing ...
PPT- Molecular Electronic Devices- Slideworld Medical Search Engines
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   363
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PPT- Alpha particle decay from nucleus; Source-Drain tunneling in MOSFETs; Single Electron Tunneling Devices (SETs) Resonant Tunneling Devices (RTDs)
PPT- Analytical Modeling of RF Noise in MOSFETs – A Review- Slideworld Medical Search Engines
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   347
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PPT- Analytical Modeling of RF Noise in MOSFETs – A Review
Topic 2 Basic Electrical Properties of MOSFETS
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   342
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Ohmic RegimeDrain Current calc; Recall Ids = Qc / t . also Qd = Eg ? ins ? o. Total Charge Qc = Qd X Area = Qd X W X L. Effective gate voltage = Vgs -Vt
High Frequency Model of Sub 100nm High k RF CMOS
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   258
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Igd . Igs . Electrical isolation breaks down leading to high dissipation . High-k insulator resolves this problem. High-k is hot technology in future MOSFET
Analytical Modeling of RF Noise in MOSFETs – A Review
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   250
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Han, H.Shin and K. Lee, Analytical Drain Thermal Noise Current Model Valid for Deep Submicron MOSFETs, IEEE Trans. Electron Devices, vol. 51, pp. 261-269, Feb. 2004.
PPT- Design Oriented Model for Symmetric DG MOSFET - Slideworld Medical Search Engines
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   191
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PPT- Scaling limits in BULK MOSFET; The Double-Gate (DG) MOSFET; Compact model for symmetric DG MOSFET; Model validation vs. 2D simulations; Model implementation in VHDL-AMS
Silicon on Insulator MOSFET Technology
Author: Anonymous
Institution

Powerpoint Presentation Downloads:   140
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Identical behavior for the FinFET and TriGate transistors. TriGate performance again superior to the FinFET. Overall device performance better than that of a planar MOSFET
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